maximum ratings: (t c =25c) symbol BD135 bd137 bd139 units collector-base voltage v cbo 45 60 100 v collector-emitter voltage v ceo 45 60 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 1.5 a peak collector current i cm 2.0 a continuous base current i b 0.5 a peak base current i bm 1.0 a power dissipation (t mb 70c) p d 8.0 w power dissipation (t a =25c) p d 1.25 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jmb 10 c/w thermal resistance ja 100 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =30v 100 na i cbo v cb =30v, t c =125c 10 a i ebo v eb =5.0v 100 na bv ceo i c =30ma (BD135) 45 v bv ceo i c =30ma (bd137) 60 v bv ceo i c =30ma (bd139) 80 v v ce(sat) i c =500ma, i b =50ma 0.5 v v be(on) v ce =2.0v, i c =500ma 1.0 v h fe v ce =2.0v, i c =5.0ma 40 h fe v ce =2.0v, i c =150ma 63 250 h fe v ce =2.0v, i c =500ma 25 f t v ce =5.0v , i c =50ma, f=100mhz 190 mhz BD135-10 BD135-16 bd137-10 bd137-16 bd139-10 bd139-16 symbol test conditions min max min max h fe v ce =2.0v, i c =500ma 63 160 100 250 BD135 bd137 bd139 npn silicon transistor to-126 case central semiconductor corp. tm r3 (18-september 2009) description: the central semiconductor BD135, bd137, and bd139 are npn silicon epitaxial planar transistors designed for audio amplifier and switching applications. marking: full part number
central semiconductor corp. tm to-126 case - mechanical outline BD135 bd137 bd139 npn silicon transistor r3 (18-september 2009) lead code: 1) emitter 2) collector 3) base mounting pad is common to pin 2 marking: full part number
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